Author/Authors :
Dalla Betta، نويسنده , , Gian-Franco and Batignani، نويسنده , , Giovanni and Boscardin، نويسنده , , Maurizio and Bosisio، نويسنده , , Luciano and Gregori، نويسنده , , Paolo and Pancheri، نويسنده , , Lucio and Piemonte، نويسنده , , Claudio and Ratti، نويسنده , , Lodovico and Verzellesi، نويسنده , , Giovanni and Zorzi، نويسنده , , Nicola، نويسنده ,
Abstract :
We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.
Keywords :
Bipolar junction transistors , Silicon radiation detectors , Electrical characterization , field effect transistors , Fabrication technology
