Title of article
Monolithic integration of detectors and transistors on high-resistivity silicon
Author/Authors
Dalla Betta، نويسنده , , Gian-Franco and Batignani، نويسنده , , Giovanni and Boscardin، نويسنده , , Maurizio and Bosisio، نويسنده , , Luciano and Gregori، نويسنده , , Paolo and Pancheri، نويسنده , , Lucio and Piemonte، نويسنده , , Claudio and Ratti، نويسنده , , Lodovico and Verzellesi، نويسنده , , Giovanni and Zorzi، نويسنده , , Nicola، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
6
From page
658
To page
663
Abstract
We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.
Keywords
Bipolar junction transistors , Silicon radiation detectors , Electrical characterization , field effect transistors , Fabrication technology
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2007
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2207113
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