Title of article :
Radiation-hard ASICs for LHC optical data transmission
Author/Authors :
Gan، نويسنده , , K.K. and Kagan، نويسنده , , H.P. and Kass، نويسنده , , R.D. (Dan) Moore، نويسنده , , J.R. and Smith، نويسنده , , D.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
2
From page :
475
To page :
476
Abstract :
We have designed several ASICs for possible applications in a new ATLAS pixel layer for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL, a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock, and a clock multiplier to produce a higher frequency clock to serialize the data for transmission. These chips were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated chips and the submission has been mostly successful. We irradiated the chips with 24 GeV/c protons at CERN to a dosage of 70 Mrad. We observed no significant degradation except the driver circuit in the VCSEL driver fabricated using the thick oxide process in order to provide sufficient voltage to drive a VCSEL. The degradation is due to the radiation induced large threshold shifts in the PMOS transistors used.
Keywords :
LHC , Opto-link ASIC , Radiation-hard
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2010
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2207129
Link To Document :
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