Title of article
Evaluation of OKI SOI technology
Author/Authors
Ikegami، نويسنده , , Y. and Arai، نويسنده , , Y. and Hara، نويسنده , , K. and Hazumi، نويسنده , , M. and Ikeda، نويسنده , , H. and Ishino، نويسنده , , H. and Kohriki، نويسنده , , T. and Miyake، نويسنده , , H. and Mochizuki، نويسنده , , A. and Terada، نويسنده , , S. and Tsuboyama، نويسنده , , T. and Unno، نويسنده , , Y.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
6
From page
706
To page
711
Abstract
The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.
Keywords
SOI , CMOS , Radiation damage , FET
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2007
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2207138
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