Title of article :
Impact of annealing of trapping times on charge collection in irradiated silicon detectors
Author/Authors :
Kramberger، نويسنده , , G. and Cindro، نويسنده , , V. and Mandi?، نويسنده , , I. and Mikuz، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
4
From page :
762
To page :
765
Abstract :
The evolution of effective trapping times with time in position sensitive silicon detectors at the experiments at Large Hadron Collider (LHC) has been calculated for envisaged operation scenario. The trapping probability of holes will increase by 30% when compared to the value at the end of beneficial annealing for the same total fluence. The effective trapping probability of electrons on the other hand will decrease by around 15%. Possible operation scenarios for an upgrade of LHC (SLHC) were investigated and the differences in terms of charge trapping were compared. The simulation confirms the observations that at fluences Φ eq > 2 × 10 15 cm - 2 the long term annealing does not affect much the CCE of highly segmented n + -p devices.
Keywords :
Effective carrier trapping time , Charge collection efficiency , Silicon detectors
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2007
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2207166
Link To Document :
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