Title of article
Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors
Author/Authors
Tosi، نويسنده , , C. and Bruzzi، نويسنده , , M. and Macchiolo، نويسنده , , A. and Scaringella، نويسنده , , M. G. Petterson، نويسنده , , M.K. and Sadrozinski، نويسنده , , H.F.-W. and Betancourt، نويسنده , , C. and Manna، نويسنده , , N. and Creanza، نويسنده , , D. and Boscardin، نويسنده , , M. and Piemonte، نويسنده , , C. and Zorzi، نويسنده , , N. and Borrello، نويسنده , , L. and Messineo، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
3
From page
766
To page
768
Abstract
The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1 × 10 15 cm - 2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.
Keywords
Silicon particle detectors , SuperLHC , Radiation damage , Semiconductor detectors , Defect engineering
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2007
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2207168
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