Title of article :
Anomolous IV behavior of ATLAS SCT microstrip sensors
Author/Authors :
Nakamura، نويسنده , , Y. and Hara، نويسنده , , K. and Nakamura، نويسنده , , K. and Inoue، نويسنده , , K. and Shinma، نويسنده , , S. and Ikegami، نويسنده , , Y. and Kohriki، نويسنده , , T. and Terada، نويسنده , , S. and Unno، نويسنده , , Y.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
We observe deteriorated IV, leakage-to-voltage, characteristics when the ATLAS SemiConductor Tracker (SCT) silicon microstrip detector is biased at a fixed voltage Vk for a long period. The leakage current is nearly halved at voltages below Vk. The noise figure is deteriorated and signal charge spreads to neighboring strips. The detector performance is, however, not degraded when biased at or above Vk. We characterize the observed phenomena in detail in this article.
Keywords :
Silicon , ATLAS , SCT , microstrip , IV , Instability , oxide layer , hole trap
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A