Author/Authors :
Vilمo، نويسنده , , R.C. and Gil، نويسنده , , J.M. and Weidinger، نويسنده , , Vilma A. and Alberto، نويسنده , , H.V. and Piroto Duarte، نويسنده , , J. and Ayres de Campos، نويسنده , , N. and Lichti، نويسنده , , R.L. and Chow، نويسنده , , K.H. and Cox، نويسنده , , S.F.J.، نويسنده ,
Abstract :
Muonium spectroscopy experiments are used to obtain detailed microscopic information about the electronic structure of the muonium impurity in II–VI compound semiconductors, used as model for isolated hydrogen. Donor and acceptor configurations are analysed, and the corresponding levels are discussed. Unique shallow donor behaviour in ZnO and the cadmium chalcogenides, contrasting with amphoteric behaviour in ZnSe and ZnS, is presented in the framework of a general model.
Keywords :
acceptor , donor , Hydrogen , II–VI semiconductors , Muonium
