Title of article
Studies of silicon photomultipliers at cryogenic temperatures
Author/Authors
Collazuol، نويسنده , , G. and Bisogni، نويسنده , , M.G. and Marcatili، نويسنده , , S. and Piemonte، نويسنده , , C. and Del Guerra، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
389
To page
392
Abstract
We investigate the behavior of silicon photomultipliers (SiPMs) at low temperatures: I–V characteristics, breakdown voltage, dark noise, afterpulsing, crosstalk, pulse shape, gain and photon detection efficiency are studied as a function of temperature in the range 50 K < T < 320 K . We discuss our measurements on the basis of the temperature dependent properties of silicon and of the models related to carrier generation, transport and multiplication in high electric field. We conclude that SiPMs provide an excellent alternative to vacuum tube photomultipliers (PMTs) in low temperature environments, even better than in room temperature ones: in particular they excel in the interval 100 K < T < 200 K .
Keywords
Silicon PhotoMultiplier , Avalanche photodiode , Tunneling current , Afterpulsing , Quantum efficiency , low temperature , Dark noise , crosstalk , Carrier freeze-out , avalanche breakdown
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2011
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2207728
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