Title of article
Direct and inverse Staebler–Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors
Author/Authors
Arce، نويسنده , , P. and Barcala، نويسنده , , J.M. and Calvo، نويسنده , , E. and Ferrando، نويسنده , , A. and Josa، نويسنده , , M.I. and Molinero، نويسنده , , A. and Navarrete-Bolaٌos، نويسنده , , J. and Oller، نويسنده , , J.C. and Yuste، نويسنده , , C. and Brochero، نويسنده , , J. and Calderَn de la Barca Sلnchez، نويسنده , , A. and Fernلndez، نويسنده , , M.G. and Gَmez، نويسنده , , G. and Gonzلlez-Sلnchez، نويسنده , , F.J. and Martيnez-Rivero، نويسنده , , C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
3
From page
164
To page
166
Abstract
The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681 nm diode–laser and a 633 nm He–Ne laser is presented. Both direct and inverse Staebler–Wronski effects are observed.
Keywords
ASPD , amorphous silicon , Direct and inverse Staebler–Wronski effects , Position sensing detectors
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2011
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2208056
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