A TCT and annealing study on Magnetic Czochralski silicon detectors irradiated with neutrons and 24 GeV/c protons

Silicon diodes (pad detectors) were irradiated with 24 GeV/c protons at the CERN PS IRRAD1 facility and with neutrons at the TRIGA reactor in Ljubljana (Slovenia). The diodes were realized on Magnetic Czochralski (MCz) grown silicon, of both n- and p-type. After irradiation, an annealing study with CV measurements was performed on 24 GeV/c proton irradiated detectors, looking for hints of type inversion after irradiation and during annealing. Other pad detectors were studied using the TCT (transient current technique), to gather information about the field profile in the detector bulk and thus about the effective space charge distribution within it.