Title of article
Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10boron films
Author/Authors
Voss، نويسنده , , L.F. and Reinhardt، نويسنده , , C.E. and Graff، نويسنده , , R.T. and Conway، نويسنده , , A.M. and Nikoli?، نويسنده , , R.J. and Deo، نويسنده , , Nirmalendu and Cheung، نويسنده , , Chin Li، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
3
From page
821
To page
823
Abstract
Isotopically enriched 10boron films have been successfully etched in an Electron Cyclotron Resonance (ECR) etching tool using CF4 and SF6 based plasmas. Comparisons between the two are made with regard to etch rate, selectivity to the underlying Si device structure, and morphology of the 10boron post-etching. Our present film etching development is expected to be critical for the fabrication of next generation thermal neutron solid state detectors based on 10boron.
Keywords
boron , detector , Neutron , PLASMA , etch , Processing
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2009
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2209915
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