Title of article :
Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC
Author/Authors :
Casse، نويسنده , , Gianluigi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
7
From page :
54
To page :
60
Abstract :
The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm−2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.
Keywords :
Silicon detectors , Super LHC detectors , Radiation hardness
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2009
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2210521
Link To Document :
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