Anomalous behaviour of growth of crystalline and amorphous GaxSe1−x

X-ray powder data are presented and analyzed for the semiconducting compound GaxSe1−x (x=0.2, 0.3, 0.4) samples, which were prepared by a melt quench method. X-ray diffraction (XRD) shows the crystalline nature of the compound. This behaviour is anomalous and contrary to the normal practice because amorphous materials are made by a melt quench technique, but for GaxSe1−x case, it has been proved that one can get crystalline material just by a melt quench technique (which of course is a quicker process). Such behaviour may be attributed to a very, very low equilibrium time of GaxSe1−x compound.