Title of article :
Nano-Texturing of Surfaces by Constricting Epitaxial Growth of Molecules
Author/Authors :
Kakuta، نويسنده , , A. and Moronuki، نويسنده , , N. and Furukawa، نويسنده , , Y.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
4
From page :
323
To page :
326
Abstract :
This paper discusses an application of molecular beam epitaxy (MBE) to a nano-texturing process. Silicon molecules grow laterally along the specific crystal planes of a silicon substrate under a specific condition. It was found that a pre-processed array of holes could compose nano-texture because it constricted these lateral growths to the specific directions of substrate. This paper clarifies the mechanism and the design of texturing. Depending on the arrangement of the hole array, various textures were obtained and their geometry and accuracy were also discussed.
Keywords :
Nano-texture , Physical vapor deposition (PVD) , Single crystal silicon
Journal title :
CIRP Annals - Manufacturing Technology
Serial Year :
2002
Journal title :
CIRP Annals - Manufacturing Technology
Record number :
2266365
Link To Document :
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