Complementary characterization techniques for identification of ferroelectric domains in KNbO3 single crystals

KNbO3 single crystals are often utilized for their piezoelectric and optical properties. In this study the domain configurations in as-grown single crystals were investigated using reflected light microscopy, scanning electron microscopy and atomic force microscopy. Using atomic force microscopy it was possible to image the distortion induced on the crystal surface by the domain walls and to quantify the predicted angle between (001)pc planes across these walls for the cases of both 90° domain walls and S walls. These features can also be imaged using the other two techniques. This direct measurement of surface distortion verifies the geometrical model of domain structures, and suggests that any possible strain energy considerations are minor in predicting the surface topography in the material after phase changes from the growth temperature.