Title of article
Analysis of ISE in dynamic hardness measurements of β-Sn single crystals using a depth-sensing indentation technique
Author/Authors
?ahin، نويسنده , , O. and Uzun، نويسنده , , O. and Kolemen، نويسنده , , U. and Ucar، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
8
From page
729
To page
736
Abstract
The dynamic indentation tests on (001) plane β-Sn single crystals having different growth directions under different peak indentation test load (10, 20, 30, 40, and 50 mN) has been investigated. The experimental results reveal that the measured hardness values exhibit a peak-load dependence, i.e., indentation size effect (ISE). Such peak-load dependence is then analyzed using the Meyerʹs law, the Hays–Kendallʹs approach, the Elastic/Plastic Deformation model, the Proportional Specimen Resistance (PSR) model, and the Modified PSR (MPSR) model. As a result, Modified PSR model is found to be the most effective for dynamic hardness determination of β-Sn single crystals.
Keywords
Dynamic hardness , Depth-sensing indentation technique , Indentation size effect (ISE) , ?-Sn single crystal
Journal title
Materials Characterization
Serial Year
2008
Journal title
Materials Characterization
Record number
2266859
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