Title of article
Sample refinement and manipulation of silicon nanowires: A step towards single wire characterization
Author/Authors
He، نويسنده , , J.Z. and XU، نويسنده , , J.B and Xie، نويسنده , , Z and Chiah، نويسنده , , M.F and Ke، نويسنده , , N and Cheung، نويسنده , , W.Y and Wilson، نويسنده , , I.H and Ma، نويسنده , , X.L. and Tang، نويسنده , , Y.H and Wang، نويسنده , , N and Lee، نويسنده , , C.S and Lee، نويسنده , , S.T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
177
To page
181
Abstract
Refined silicon nanowires have been prepared by a mild etching process and suspended into liquid in order to make them manageable for individual characterization. A transmission electron microscopy (TEM) study has revealed that the etching starts selectively at defect sites on the wires. This implies that the refined wires have many fewer defects than those made of raw materials. Efforts have been made to mount single nanowires onto the desired electrodes by electrophoresis. Compared with the commonly used microactuation method in the field, this is a far more realistic practical use of the wires that has an industrial value.
Journal title
Materials Characterization
Serial Year
2002
Journal title
Materials Characterization
Record number
2270490
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