Author/Authors :
Wang، نويسنده , , B and Kwok، نويسنده , , K.W and Chan، نويسنده , , H.L.W. and Choy، نويسنده , , C.L. and Tong، نويسنده , , K.Y and Luo، نويسنده , , E.Z and Xu، نويسنده , , J.B. and Wilson، نويسنده , , I.H، نويسنده ,
Abstract :
Sol–gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2 films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2 K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2 films.
Keywords :
Polarization switching , PZT , Self-polarization , Internal field
