Infrared photodetection with semiconductor self-assembled quantum dots

Semiconductor self-assembled quantum dots are potential candidates to develop a new class of midinfrared quantum photodetectors and focal plane arrays. In this article, we present the specific midinfrared properties of InAs/GaAs quantum dots associated with the intersublevel transitions. The electronic structure, which accounts for the strain field in the islands, is obtained within the framework of a three-dimensional 8 band k.p formalism. The midinfrared intersublevel absorption in n-doped quantum dots is described. We show that the carrier dynamics can be understood in terms of polarons which result from the strong coupling regime for the electron–phonon interaction in the dots. The principle of operation of vertical and lateral quantum dot infrared photodetectors is described and discussed by comparison with quantum well infrared photodetectors. We review the performances of different type of detectors developed to date and finally give some orientation to realize high performance quantum dot infrared photodetectors. To cite this article: P. Boucaud, S. Sauvage, C. R. Physique 4 (2003).