Title of article
Non-volatile magnetic random access memories (MRAM)
Author/Authors
Sousa، نويسنده , , Ricardo C. and Prejbeanu، نويسنده , , I. Lucian، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
9
From page
1013
To page
1021
Abstract
Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is described as well as the main subsisting design challenges. Special emphasis is placed on bit write strategies and their respective scaling perspectives. To cite this article: R.C. Sousa, I.L. Prejbeanu, C. R. Physique 6 (2005).
Keywords
MRAM , MRAM , Magnetic tunnel junction , memory , mémoire , Non-volatile , Jonctions tunnel magnétiques
Journal title
Comptes Rendus Physique
Serial Year
2005
Journal title
Comptes Rendus Physique
Record number
2283608
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