Relaxation plastique dʹun film mince par émission de dislocations filantes vis

The system formed by a thin film coherent with a crystalline substrate can relax its internal energy by annealing. Threading dislocations emitted after ten minutes annealing at 350 °C of the Si0.68Ge0.32/Si(001) heterostructure are observed in transmission electron microscopy, and then identified by comparison to simulated images of angular dislocations placed in a semi infinite medium. They are of screw character, which explains the rapid coverage of the interface by 60° dislocations oriented 〈110〉. To cite this article: R. Bonnet et al., C. R. Physique 9 (2008).