• Title of article

    Optical properties of GaN/AlN quantum dots

  • Author/Authors

    Lefebvre، نويسنده , , Pierre and Gayral، نويسنده , , Bruno، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    14
  • From page
    816
  • To page
    829
  • Abstract
    We present here a review of the peculiar optical properties of GaN/AlN quantum dots. These systems show unusually large exciton binding energies and band-offsets. Moreover, when grown along the (0001) axis in the wurtzite phase, the optical properties are dominated by huge on-axis internal electric fields, leading to a very low oscillator strength and complex dynamical behavior. It is also possible to grow GaN quantum dots in the cubic phase or along nonpolar axis of the wurtzite cell. We discuss properties of ensembles of quantum dots, as well as of single quantum dots studied by micro-photoluminescence. To cite this article: P. Lefebvre, B. Gayral, C. R. Physique 9 (2008).
  • Keywords
    Quantum dot , Wurtzite phase , Boîte quantique , GaN/AlN , GaN/AlN , Phase wurtzite
  • Journal title
    Comptes Rendus Physique
  • Serial Year
    2008
  • Journal title
    Comptes Rendus Physique
  • Record number

    2284007