Title of article
Optical properties of GaN/AlN quantum dots
Author/Authors
Lefebvre، نويسنده , , Pierre and Gayral، نويسنده , , Bruno، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
14
From page
816
To page
829
Abstract
We present here a review of the peculiar optical properties of GaN/AlN quantum dots. These systems show unusually large exciton binding energies and band-offsets. Moreover, when grown along the (0001) axis in the wurtzite phase, the optical properties are dominated by huge on-axis internal electric fields, leading to a very low oscillator strength and complex dynamical behavior. It is also possible to grow GaN quantum dots in the cubic phase or along nonpolar axis of the wurtzite cell. We discuss properties of ensembles of quantum dots, as well as of single quantum dots studied by micro-photoluminescence. To cite this article: P. Lefebvre, B. Gayral, C. R. Physique 9 (2008).
Keywords
Quantum dot , Wurtzite phase , Boîte quantique , GaN/AlN , GaN/AlN , Phase wurtzite
Journal title
Comptes Rendus Physique
Serial Year
2008
Journal title
Comptes Rendus Physique
Record number
2284007
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