Title of article :
Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
Author/Authors :
Tallaire، نويسنده , , Alexandre and Achard، نويسنده , , Jocelyn and Silva، نويسنده , , François and Brinza، نويسنده , , Ovidiu and Gicquel، نويسنده , , Alix، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesses of up to a few millimetres. However the requirements in terms of size, purity and crystalline quality are getting more and more difficult to achieve with respect to the forecasted applications, thus pushing the synthesis method to its scientific and technological limits. In this paper, after a short description of the operating principles of the growth technique, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping will be detailed before offering some insights into ways to overcome them.
Keywords :
Defects , diamond , Crystal growth , Doping , chemical vapour deposition , microwave plasma , Diamant , défauts , Croissance cristalline , Dépôt chimique en phase vapeur , Plasma micro-onde , Dopage
Journal title :
Comptes Rendus Physique
Journal title :
Comptes Rendus Physique