Title of article :
DFT studies on the insertion reactions of silylenoid into Si–X bonds (X = F, Cl, Br)
Author/Authors :
Qi ، نويسنده , , Yuhua and Chen، نويسنده , , Zhonghe and Li، نويسنده , , Ping، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
5
From page :
61
To page :
65
Abstract :
The insertion reactions of the silylenoid H2SiLiF into Si–X bonds (X = F, Cl, Br) have been studied by ab initio and DFT calculations. The results indicate that the insertions proceed in a concerted manner, forming H2SiXCH3 and LiF. The essence of these reactions are the donations of the electrons of X into the p orbital on the Si atom in H2SiLiF and the σ electrons on the Si atom in H2SiLiF to the positive SiH3 group. The order of reactivity by H2SiLiF insertion indicates the reaction barriers increase for the same-family element X from top down in the periodic table. All the insertions are exothermic reactions.
Keywords :
DFT , Insertion reactions , Theoretical study , Silylenoids
Journal title :
Computational and Theoretical Chemistry
Serial Year :
2011
Journal title :
Computational and Theoretical Chemistry
Record number :
2284968
Link To Document :
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