Author/Authors :
Miura، نويسنده , , Ryo and Fujishima، نويسنده , , Tetsuo and Uchimura، نويسنده , , Hiromichi and Toda، نويسنده , , Kensuke and Kobayashi، نويسنده , , Makoto and Ashikawa، نويسنده , , Naoko and Sagara، نويسنده , , Akio and Yoshida، نويسنده , , Naoaki and Hatano، نويسنده , , Yuji and Oya، نويسنده , , Yasuhisa and Okuno، نويسنده , , Kenji، نويسنده ,
Abstract :
The D2+ fluence dependence on deuterium (D) retention was studied to clarify the D retention mechanism in tungsten. The additional D desorption stage was observed around 660 K in the TDS spectrum for a sample implanted with D2+ up to the fluence of 1023 D+ m−2, which desorption stage was not observed the D2+ implanted sample with the fluence less than 1022 D+ m−2. The TEM observation showed that the highly dense voids were formed in tungsten by D2+ implantation with the fluence of 1023 D+ m−2, considering that the D would be trapped by voids. To understand the D trapping by voids in C+ implanted tungsten, C+–D2+ sequential implantation experiments at various C+ implantation temperatures were performed. It was found that the amount of D desorbed around 560 K was increased by increasing the C+ implantation temperature. The formation of the voids was observed with increasing the C+ implantation temperature by TEM, indicating that the increase of D desorption around 560 K was caused by the formation of voids. However, the desorption temperature of D trapped by voids in C+ implanted sample was lower than that in D2+ implanted one. TEM observation and XPS measurement indicated that this difference was caused by the increase of void size and/or the presence of implanted carbon.
Keywords :
carbon , Deuterium retention behavior , Tungsten , Voids , TDS , TEM