Behavior of carbon readsorbed on tungsten during low energy Ar ion irradiation at elevated temperatures

A study of the behavior of carbon sputtered and readsorbed after scattering collisions with particles of surrounding gas on the tungsten surface affected by Ar ion irradiation with the flux equal to 2 × 1016 cm−2 s−1 extracted from plasma under 300 V negative bias voltage in the temperature range 370–870 K was performed. The dependence of the W sample weight change on the working gas pressure in the range 0.1–10 Pa was registered and the information was deduced about prevailing sputtering-redeposition processes. The depth profiles of carbon at the tungsten surface were measured. We found that carbon distribution profiles in tungsten depend on the C redeposition rate for fixed ion irradiation parameters. Three regimes have been distinguished: (i) at working gas pressure equal to 5 Pa and more, the C redeposition rate prevails the sample surface erosion rate and the W surface is covered by continuous amorphous carbon film (the C film growth regime), (ii) at working gas pressure equal to about 1 Pa, the C redepostion rate is approximately equal to the erosion rate and the W surface is partially covered by redeposited carbon, and (iii) at working gas pressure less than 0.2 Pa, the erosion rate prevails the C redeposition rate (the W surface erosion regime). In the regime of balanced redeposition and erosion deep C penetration depth into nanocrystalline W was registered. suggested that under simultaneous C adsorption and ion irradiation at elevated temperature C adatoms are driven from the W surface into grain boundaries and into the bulk by the difference in chemical potentials between the activated W surface and grain boundaries. As the W surface is covered by amorphous C film, the grain boundaries are blocked and the efficiency of carbon transport decreases.