Title of article :
Initial damage processes for diamond film exposure to hydrogen plasma
Author/Authors :
Deslandes، نويسنده , , A. and Guenette، نويسنده , , M.C. and Samuell، نويسنده , , C.M. and Karatchevtseva، نويسنده , , I. and Ionescu، نويسنده , , M. and Cohen، نويسنده , , D.D. and Blackwell، نويسنده , , B. and Corr، نويسنده , , C. and Riley، نويسنده , , D.P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
7
From page :
3101
To page :
3107
Abstract :
Diamond is considered to be a possible alternative to other carbon based materials as a plasma facing material in nuclear fusion devices due to its high thermal conductivity and resistance to chemical erosion. In this work CVD diamond films were exposed to hydrogen plasma in the MAGnetized Plasma Interaction Experiment (MAGPIE): a linear plasma device at the Australian National University which simulates plasma conditions relevant to nuclear fusion. Various negative sample stage biases of magnitude less than 500 V were applied to control the energies of impinging ions. Characterisation results from SEM, Raman spectroscopy and ERDA are presented. No measureable quantity of hydrogen retention was observed, this is either due to no incorporation of hydrogen into the diamond structure or due to initial incorporation as a hydrocarbon followed by subsequent etching back into the plasma. A model is presented for the initial stages of diamond erosion in fusion relevant hydrogen plasma that involves chemical erosion of non-diamond material from the surface by hydrogen radicals and damage to the subsurface region from energetic hydrogen ions. These results show that the initial damage processes in this plasma regime are comparable to previous studies of the fundamental processes as reported for less extreme plasma such as in the development of diamond films.
Keywords :
etch , Plasma facing material , Raman , diamond , Elastic recoil detection
Journal title :
Fusion Engineering and Design
Serial Year :
2013
Journal title :
Fusion Engineering and Design
Record number :
2370454
Link To Document :
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