Defects instability under IR laser treatment in p-CdZnTe crystals

With the purpose of defect transformation and obtaining material which is suitable for some optoelectronics applications, undoped р-CdZnTe crystals were treated by IR laser radiation. For crystal properties characterization their low-temperature photoluminescence spectra before and after IR treatment were investigated. It was shown that a fine photoluminescence spectra structure, stimulated by IR laser treatment, have been generated. Observed after the IR laser treatment the transformations in р-CdZnTe photoluminescence spectra are connected with activation of background impurities and intrinsic components in inclusions, existing in untreated crystals. The background impurities, which are activated by IR laser radiation, do not produce deep levels with sufficient density of states in the gap for a high degree of compensation to be realized.