Confinement-enhanced dots-in-a-well QDIPs with operating temperature over 200 K

LWIR InAs/Al0.3Ga0.7As/In0.15Ga0.85As confinement-enhanced DWELL (CE-DWELL) QDIPs with operation temperatures higher than 200 K are reported. A thin Al0.3Ga0.7As barrier layer was inserted above the InAs QDs to improve the confinement of QD states in the In0.15Ga0.85As DWELL structure and the device performance. The better confinement of the electronic states increases the oscillator strength of the infrared absorption. The higher excited state energy also improves the escape probability of the photoelectrons. Compared with the conventional DWELL QDIPs, the quantum efficiency increases for more than 20 times and the detectivity is an order of magnitude higher at 77 K. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature and long wavelength detection at the same time.