Author/Authors :
Aina، نويسنده , , Leye and Hier، نويسنده , , Harry and Fathimulla، نويسنده , , Ayub and Lecates، نويسنده , , Mark and Kolodzey، نويسنده , , J. and Goossen، نويسنده , , Keith and Coppinger، نويسنده , , Matthew and Bhargava، نويسنده , , Nurpur، نويسنده ,
Abstract :
This paper will describe the first-of-a-kind development and demonstration of dilute nitride strained layer superlattice detectors with detectivity as high as 4 × 1010 cm Hz1/2/W and cut-off wavelength of 11-μm for an LWIR design and a cut-off wavelength of 22-μm for a VLWIR design. The developed dilute nitride SLS detectors are based on ultra-low leakage dilute nitride epitaxial layers and/or strained layer superlattices (SLS) of InAs/InAsSbN and InAs/GaInSbN that could enable high VLWIR detectivities at elevated temperatures and at low cost.
Keywords :
Dilute nitrides , VLWIR , LWIR , Infrared photodetector , Strained layers superlattice
