Title of article :
Dark current analysis of InAs/GaSb superlattices at low temperatures
Author/Authors :
Nguyen، نويسنده , , Jean and Ting، نويسنده , , David Z. and Hill، نويسنده , , Cory J. and Soibel، نويسنده , , Alexander and Keo، نويسنده , , Sam A. and Gunapala، نويسنده , , Sarath D.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
A limitation to the advancement of the strained-layer superlattice technology for infrared detection is unwanted high dark currents and low R0A values, especially at long-wavelengths. In this paper, we discuss dark current characteristics of LWIR InAs/GaSb type-II superlattice detectors. Comparing devices with different dominant mechanisms, a more thorough analysis at low temperatures is provided.
Keywords :
Infrared detector , Dark current , superlattices
Journal title :
Infrared Physics & Technology
Journal title :
Infrared Physics & Technology
