Author/Authors :
Rutz، نويسنده , , Frank and Rehm، نويسنده , , Robert and Walther، نويسنده , , Martin and Schmitz-Esser، نويسنده , , Johannes and Kirste، نويسنده , , Lutz and Wِrl، نويسنده , , Andreas and Masur، نويسنده , , Jan-Michael and Scheibner، نويسنده , , Ralf and Ziegler، نويسنده , , Johann، نويسنده ,
Abstract :
We present the InAs/GaSb type-II superlattice dual-color technology developed at Fraunhofer IAF. This includes insights into some of the test methodologies employed at various stages during the fabrication process, which ensure that the basic requirements for achieving high detector performance are met. Much effort is put in improving and monitoring the quality of the substrate and the epilayers. We also present performance data from a dual-color mid-wavelength infrared (MWIR) camera which incorporates the latest backside process technology.
Keywords :
Infrared focal plane array , MWIR , Dual-color , Wafer inspection , InAs/GaSb superlattice
