Dark current and optical properties in asymmetric GaAs/AlGaAs staircase-like multiquantum well structure

In this study, we investigate dark current voltage characteristics of GaAs/AlGaAs staircase-like asymmetric multiquantum well structure at various temperatures experimentally. Measured dark current density–voltage (Jd–V) characteristics are compared with the Levine Model. It is seen that the model fits well with the experimental dark current density. Ground state energy of electrons, heavy holes and light holes are calculated by Kronig–Penney Model. Optical properties of sample are characterized by photoluminescence and photoconductivity measurements. The temperature-dependent photoluminescence (PL) spectra of the GaAs/GaAlAs QWIP show that the peaks corresponding interband transition from the ground heavy-hole subband to the ground electronic subband (Ehh1 − Ee1) are dominantly observed and the peak positions corresponding to the interband transitions of the PL spectrum are dependent on the temperature. Photoconductivity measurement is performed for different negative polarities at 37 K.