Author/Authors :
Rehm، نويسنده , , Robert and Masur، نويسنده , , Michael and Schmitz، نويسنده , , Johannes and Daumer، نويسنده , , Volker and Niemasz، نويسنده , , Jasmin and Vandervelde، نويسنده , , Thomas and DeMeo، نويسنده , , Dante and Luppold، نويسنده , , Wolfgang and Wauro، نويسنده , , Matthias and Wِrl، نويسنده , , Andreas and Rutz، نويسنده , , Frank and Scheibner، نويسنده , , Ralf and Ziegler، نويسنده , , Johann and W، نويسنده ,
Abstract :
Future heterojunction InAs/GaSb superlattice (SL) detector devices in the long-wavelength infrared regime (LWIR, 8–12 μm) require an accurate bandstructure model and a successful surface passivation. In this study, we have validated the superlattice empirical pseudopotential method developed by Dente and Tilton over a wide range of bandgap energies. Furthermore, dark current data for a novel dielectric surface passivation for LWIR devices is presented. Next, we present a technique for high-resolution, full-wafer mapping of etch pit densities on commercial (1 0 0) GaSb substrates, which allows to study the local correlation between threading dislocations in the substrate and the electro-optical pixel performance. Finally, recent performance data for 384 × 288 dual-color InAs/GaSb superlattice imagers for the mid-wavelength infrared (MWR, 3–5 μm) is given.
Keywords :
Dual-color , MWIR , Superlattice empirical pseudopotential method , InAs/GaSb superlattice , Infrared focal plane array , LWIR
