Author/Authors :
Gustafsson، نويسنده , , O. and Karim، نويسنده , , A. and Wang، نويسنده , , Q. and Berggren، نويسنده , , J. and Asplund، نويسنده , , C. and Andersson، نويسنده , , J.Y. and Hammar، نويسنده , , M.، نويسنده ,
Abstract :
We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 μm at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.
Keywords :
LWIR , InGaSb , QD , MOVPE
