Title of article
nBn dark current reduction by UV hydrogenation
Author/Authors
Jain، نويسنده , , M. and Pedrazzani، نويسنده , , J.R. and Golding، نويسنده , , T.G. and Cottier، نويسنده , , R. and Holland، نويسنده , , O.W. and Hellmer، نويسنده , , R. and Wicks، نويسنده , , G.W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
2
From page
156
To page
157
Abstract
This study reports on hydrogenation of InAs nBn photodetectors grown on a lattice mismatched GaAs substrate. The mismatched growth causes increases in dark current by factors of 8–16 (voltage- and temperature-dependent), with respect to similar lattice matched growth. UV hydrogenation of the mismatched nBn’s produced significant decrease in dark current without decreasing the photocurrent.
Keywords
InAs , Dark current , NbN , Hydrogenation , detector
Journal title
Infrared Physics & Technology
Serial Year
2013
Journal title
Infrared Physics & Technology
Record number
2376271
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