• Title of article

    The developments of InP-based quantum dot lasers

  • Author/Authors

    Li، نويسنده , , Denis S.G. and Gong، نويسنده , , Q. and Cao، نويسنده , , C.F. and Wang، نويسنده , , X.Z. and Yan، نويسنده , , J.Y. and Wang، نويسنده , , Y. and Wang، نويسنده , , H.L.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2013
  • Pages
    9
  • From page
    216
  • To page
    224
  • Abstract
    Due to the low density states and high radiative efficiency, quasi-zero-dimensional quantum dot has already exposited major new advances in both fundamental physics and device applications. In this paper we concentrated on the recent developments of the InAs/InP system quantum dot lasers, operating nearby the important fiber communication system of 1.55 μm. In all cases, we stressed the significant progress in the understanding of basic optical and electronic properties to enable the importance steps forward. The developments have been almost covered the important advances for both large ensembles and for individual quantum dots devices, emphasizing the versatility of these systems in opening up a variety of new phenomena. The prospects for further progress directed towards new quantum dot laser for 2–3 μm, stability of single frequency operation with wide tunable range and single photon source are also described.
  • Keywords
    Quantum dot lasers , Indium phosphide , Optical and electrical properties , Self-assembled growth mode
  • Journal title
    Infrared Physics & Technology
  • Serial Year
    2013
  • Journal title
    Infrared Physics & Technology
  • Record number

    2376337