Author/Authors :
Tong، نويسنده , , Guoxiang and Li، نويسنده , , Yi and Wang، نويسنده , , Feng and Huang، نويسنده , , Yize and Fang، نويسنده , , Baoying and Wang، نويسنده , , Xiaohua and Zhu، نويسنده , , Huiqun and Li، نويسنده , , Liu and Shen، نويسنده , , Yujian and Zheng، نويسنده , , Qiuxin and Liang، نويسنده , , Qian and Yan، نويسنده , , Meng and Qin، نويسنده , , Yuan and Ding، نويسنده , , Jie، نويسنده ,
Abstract :
By deposition of metallic vanadium on FTO substrate in Argon atmosphere at room temperature, the sample was then annealed in furnace for 2 h at the temperature of 410 °C in air ambient. (1 1 0) -orientated vanadium dioxide films were prepared on the FTO surface. A maximum transmittance of ∼40% happened at 900–1250 nm region at room temperature. The change of optical transmittance at this region was ∼25% between semiconducting and metallic states. In particular, vanadium dioxide thin films on FTO exhibit semiconductor–metal phase transition at ∼51 °C, the width of the hysteresis loop is ∼8 °C.
