Author/Authors :
Panjwani، نويسنده , , Deep and Yesiltas، نويسنده , , Mehmet and Nath، نويسنده , , Janardan and Maukonen، نويسنده , , D.E. and Rezadad، نويسنده , , Imen and Smith، نويسنده , , Evan M. and Peale، نويسنده , , R.E. and Hirschmugl، نويسنده , , Carol and Sedlmair، نويسنده , , Julia and Wehlitz، نويسنده , , Ralf and Unger، نويسنده , , Miriam and Boreman، نويسنده , , Glenn، نويسنده ,
Abstract :
A method to pattern infrared-absorbing gold black by conventional photolithography and lift-off is described. A photo-resist pattern is developed on a substrate by standard photolithography. Gold black is deposited over the whole by thermal evaporation in an inert gas at ∼1 Torr. SiO2 is then deposited as a protection layer by electron beam evaporation. Lift-off proceeds by dissolving the photoresist in acetone. The resulting sub-millimeter size gold black patterns that remain on the substrate retain high infrared absorption out to ∼5 μm wavelength and exhibit good mechanical stability. This technique allows selective application of gold black coatings to the pixels of thermal infrared imaging array detectors.
Keywords :
Photolithography , MEMS , Bolometer , Pattering , Gold black , Infrared
