Author/Authors :
Sun، نويسنده , , Weiguo and Fan، نويسنده , , Huitao and Peng، نويسنده , , Zhenyu and Zhang، نويسنده , , Liang and Zhang، نويسنده , , Xiaolei and Zhang، نويسنده , , Lei and Lu، نويسنده , , Zhengxiong and Si، نويسنده , , Junjie and Emelyanov، نويسنده , , E. and Putyato، نويسنده , , M. and Semyagin، نويسنده , , B. and Pchelyakov، نويسنده , , O. and Preobrazhenskii، نويسنده , , V.، نويسنده ,
Abstract :
Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R0A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 104 Ω/cm2, and the average value of R0A was 1.66 × 104 Ω/cm2. The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.
Keywords :
Infrared , Crystal grown , Molecular Beam Epitaxy , InSb
