Title of article :
Model of Vernier devices in silicon-on-insulator technology
Author/Authors :
Fan، نويسنده , , Guofang and Li، نويسنده , , Yuan and Hu، نويسنده , , Chunguang and Lei، نويسنده , , Lihua and Zhao، نويسنده , , Dong and Li، نويسنده , , Hongyu and Luo، نويسنده , , Yunhan and Zhen، نويسنده , , Zhen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
4
From page :
83
To page :
86
Abstract :
In order to increase the number of channels that could be multiplexed or demultiplexed in the dense wavelength division multiplexed (DWDM) system based on the resonators on silicon-on-insulator (SOI) technology, the Vernier effect in the series-coupled racetrack resonators is presented to extend the free spectral range (FSR) of the DWDM systems. A method is developed based on a matrix approach to simulate Vernier devices. A three-dimensional full vectorial finite difference (FVFD) model, specifically suited for high index contrast and smaller size waveguides, for example, a waveguide in SOI technology, is developed to obtain the properties of a waveguide. Finally, the Vernier effect in the two series-coupled racetrack resonators is experimentally verified with an improved FSR and interstitial resonance suppression.
Keywords :
FVFD , Vernier effect , Series-coupled racetrack resonators
Journal title :
Infrared Physics & Technology
Serial Year :
2014
Journal title :
Infrared Physics & Technology
Record number :
2376611
Link To Document :
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