Author/Authors :
-، - نويسنده Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran. Jafari, A. , -، - نويسنده Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran. Ghoranneviss, M. , -، - نويسنده Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran. Hantehzadeh, M. R.
Abstract :
Disordered T-shaped graphene nanodevice (TGN) was designed and studied in this paper. We demonstrated the intrinsic transport properties of the TGN by using Landauer approach. Knowing the transmission probability of an electron the current through the system is obtained using Landauer-Buttiker formalism. The effects of single disorder on conductance, current and on the transport length scales are studied using tight-binding model. It is demonstrated that the transport property of the TGN depends sensitively on the disorder positions. However, the current slightly depends on the disorder sites, but strongly depends on the geometry of TGN under small bias voltage. The mean free path in the system is reduced when the strength of disorder is sufficiently high and the mean free path patterns are found to strongly depend on the disorder position. Also observe that the current basically decreases with the stem height increase. We have found that zigzag graphene nanoribbons can be used as metal leads when we build graphene nanodevice based electronic devices.
