Title of article
Quantum analytical modeling and simulation of CNT on insulator (COI) and CNT on nothing (CON) FET: a comparative analysis
Author/Authors
Mukherjee, Sudipta Department of E.T.C.E - Jadavpur University , Bandyopadhyay, Dipan Department of E.T.C.E - Jadavpur University , Kishore Dutta, Pranab Department of E.T.C.E - Jadavpur University , Sarkar, Subir Kumar Department of E.T.C.E - Jadavpur University
Pages
7
From page
91
To page
97
Abstract
A comprehensive performance analysis by quantum analytical modeling of CNT on insulator (COI) and CNT on nothing (CON) FET having channel length 20 nm has been proposed and investigated on the basis of 2D Poisson’s Equation and solution of 1-D Schrodinger’s Equation and validated using ATLAS 2D simulator. As classical approximations fail to describe carrier quantization, charge inversion and potential profile of a device at sub-100 nm regime, here for the first time an analytical model in quantum mechanical aspect for COI/CON devices has been derived. Effects of high-k dielectrics in place of conventional SiO2 over the device characteristics have been thoroughly discussed. Moreover, all noticeable benefits of our device to the so called SOI/SON architecture have also been vividly justified.
Keywords
ATLAS 2D simulator , CNT , COI/CON , High-k dielectric , Inversion charge , Quantum threshold voltage
Journal title
Astroparticle Physics
Serial Year
2016
Record number
2406502
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