Title of article
Irradiation with Neutrons and Formation of Simple Radiation Defects in Semiconductors
Author/Authors
Sohrabnezhad, sh Department of Chemistry - Faculty of Science - University of Guilan , Rezaei Ochbelgh, D Department of Chemistry - Faculty of Science - University o f Mohaghegh Ardabili , Morsali Golboos, N Department of Chemistry - Faculty of Science - University o f Mohaghegh Ardabili
Pages
10
From page
61
To page
70
Abstract
In this research, cobalt and nickel sulfide nanoparticles (NPs) were grown on AlMCM-41 matrix by using ion exchange method. The prepared samples were irradiated by thermalized neutron that emitted from Am-Be source up to fluencies (7.9+E9n/cm2). After that, X-ray diffraction (XRD), UV-Vis spectroscopy, Fourier transform infrared (FTIR), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for irradiated and non-irradiated samples characterization. The results show nanoparticles aggregation in NiS/AlMCM-41 is more than CoS/AlMCM-41 sample. The TEM images show average size of CoS NPs before and after neutron radiation about 20 and 50 nm, respectively. In this way, average size of
NiS nanoparticles before and after neutron radiation 130 and 70 nm respectively. The DRS results show that Co2+ and Ni2+ ions produced after neutron radiation, located in tetrahedral sites in AlMCM-41. The results indicate host materials have important role in decrease of radiation defects (RDs).
Keywords
Nanocomposite , Neutron Irradiation , Diffuse Reflectance Spectroscopy , Aggregation , Radiation Defects
Journal title
Astroparticle Physics
Serial Year
2013
Record number
2424845
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