Large Vacuum Rabi Splitting in a Single Nitride-Based Quantum WellMicrocavity

Here, we report a theoretical detailed study of Vacuum Rabi Splitting (VRS) in the system of Nitride Single Quantum Well (SQW) within a semiconductor microcavity. Distributed Bragg Reflectors (DBRs) containing ZnTe/ZnSe multilayers including GaAs microcavity and AlzG01-N/GaN/AlzG01-&N (GaN/In Ga1-xN/ GaN) SQW at the center of microcavity, has been considered. Upper and lower exciton-polariton branches obtained through angle-dependent reflectance calculations performed by the means of Transfer Matrix Method (TMM). Large value of 20.1(23.4) meV VRS is obtained by changing the Aluminum (Indium) molar fraction at the Room Temperature (RT) for TM mode. Our findings show that GaN/In Ga1-xN/GaN SQW are better candidates rather thanAlzGaz-xN/GaN/AlGa1-xN to achieve larger values of VRS. Our calculations pave the way towards modeling of polaritonic devices. Keywords: Vacuum Rabi Splitting, Exciton binding energy, Nitride semiconductors.