Title of article
Room temperature photo-induced, Eu3+-doped IGZO transparent thin films fabricated using sol–gel method
Author/Authors
Krishnan, Rajagopalan Department of Physics - B.S. Abdur Rahman University - Vandalur - Tamil Nadu, India , Thirumalai, Jagannathan Department of Physics - B.S. Abdur Rahman University - Vandalur - Tamil Nadu, India , Chandramohan, Rathinam Department of Physics - Sree Sevugan Annamalai College - Tamil Nadu, India
Pages
4
From page
1
To page
4
Abstract
Red-emitting Eu3+-doped indium gallium zinc oxide (IGZO) transparent thin films were fabricated using sol–gel method
under UV (254-nm irradiation) in nitrogen atmosphere (inside the glove box) and thermally annealed at 500°C for 1 h.
Structure, morphology, composition, and optical properties of the materials were examined using X-ray diffraction
analysis, scanning electron microscope, X-ray photoelectron spectroscopy, and photoluminescence, respectively.
Keywords
Oxides , Annealing , Photoelectron spectroscopy , Luminescence
Journal title
Astroparticle Physics
Serial Year
2013
Record number
2436412
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