The Growth of Multilayer Graphene over MCM-41 by CVD Method in Atmospheric Pressure: metal–Free Nanocatalyst

Graphene films were fabricated over synthesized MCM-41 nanocatalyst by chemical vapor deposition method, and the reaction was carried in atmospheric pressure at 750˚C. Acetylene gas used as a carbon precursor and the synthesis reaction took place in hydrogen atmosphere. Mesoporous MCM-41 was synthesized at room temperature, using wet chemical method. The synthesized metal free catalyst was characterized by XRD and N2 adsorption isotherms. The catalytically synthesized graphene layers were characterized by Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The results indicated that the favorable effect of MCM-41 with high BET surface area (908.76 m2/g) as an active metal free nanocatalyst for fabricating graphene layers with high level of purity and homogeneity. Because of simplicity, easy purification, and high yield of graphene synthesis offered by this method, it is possible to use it in larger scales.