Enhancing Efficiency of Two-bond Solar Cells Based on GaAs/InGaP

Multi-junction solar cells play a crucial role in the Concentrated Photovoltaic (CPV) Systems. Recent developments in CPV concerning high power production and cost effective-ness along with better efficiency are due to the advancements in multi-junction cells. This paper presents a simulation model of the generalized Multi-junction solar cell and introduces a two-bond solar cell based on InGaP/GaAs with an AlGaAs/GaAs tunnel layer.For enhancing the efficiency of the proposed solar cell, the model adopts absorption enhancement techniques as well as reducing loss of recombination by manipulating number of junctions and varying the material properties of the multi-junctions and the tunneling layer. The proposed Multijunction solar cell model employing tunnel junctions can improve efficiency up to by 35.6%. The primary results of the simulation for the proposed structure indicate that it is possible to reduce the loss of recombination by developing appropriate lattice match among the layers; it is also likely to have suitable absorption level of the phonons. Simulation results presented in this paper are in agreement with experimental results.