Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Boron (B) doped aluminumnitride (B-AlN) thin 􀀜lms were synthesized on silicon (Si) substrates through chemical vapor deposition (CVD) at 773 °K (500 °C). Tert-butylamine (tBuNH2) solution was used as a nitrogen source and delivered through the gas bubbler. B-AlN thin 􀀜lms were prepared on Si-100 substrates by varied gas mixture ratio of three precursors. The structural properties of the 􀀜lms were investigated from the X-ray diffraction (XRD) data and veri􀀜ed the formation of polycrystalline and mixed phases of hexagonal (100) & (110) oriented AlN and orthogonal (002) & cubic (333) oriented BN. The calculated crystallite size was smaller and hence the dislocation density was higher with lowest total gas mixture ratio (25 sccm). Improved surface properties were detected for the 􀀜lm deposited at lowest total gas mixture ratio by 􀀜eld emission scanning electron microscope (FESEM) and atomic force microscope (AFM) analysis. The 􀀜lm composition showed the existence of a higher concentration of B in the 􀀜lm prepared with lower total gas mixture ratio which was con􀀜rmed by energy dispersive X-ray spectroscopy (EDX).