Effect of Temperature on Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells

This paper describes the effect of temperature on the electrical parameters of polysilicon solar cells, which are fabricated using the phosphorous spinon diffusion technique. The current–voltage characteristics of polycrystalline silicon solar cells were measured in the dark at various temperatures. A diode equivalent model was used to obtain saturation currents, which were measured for the different temperature levels .The experimental results showed that the saturation currents increased rapidly from 0.00003 to 0.0005A on increasing the temperature from 27 to 70 ˚C. The changes in the open circuit voltage and the short circuit current were found to be linear with the temperature variations: about 3 mV/˚C reduction in the open circuit voltage was observed with the temperature increase. The measurements of the short circuit current revealed that the dependency of the current on the temperature variations was very small. The short circuit current increased from 17.8 to 18.4 mA on increasing the temperature from 27 to 107 ˚C. The measurements of output powers versus load resistance were obtained at different temperature levels. The results showed that the output power dropped 30% with temperature rise from 27 to 107˚C.